METHOD FOR FABRICATING C-AXIS ORIENTED ZNO THIN FILM USING ATOMIC LAYER DEPOSITION METHOD AND OPTICAL DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a c-axis oriented ZnO thin film using an atomic layer deposition(ALD) method is provided to form a thin film oriented to a c-axis by using a glass substrate of low price and large area at a temperature of 300 deg.C or lower. CONSTITUTION: The substrate is positioned inside a chamber(S101). A zinc precursor is injected to the chamber together with carrier gas so that a zink precursor reactant is absorbed to the substrate(S102). Nitrogen gas or inert gas is injected to remove non-absorbed particles(S103). Oxygen gas is injected(S104). Oxygen precursors are injected to form a zink oxide thin film through a surface chemical reaction(S105). Nitrogen gas or inert gas is injected to eliminate non-absorbed particles and surface chemical byproducts(S106).