| 摘要 |
A process of making a buried digit line stack is disclosed. The process includes forming a silicon-lean metal silicide first film over a polysilicon plug, followed by a silicide compound barrier second film. The silicide compound barrier second film is covered with a refractory metal third film. A salicidation process causes the first film to salicide with the polysilicon plug. In one embodiment, all the aforementioned deposition processes are carried out by physical vapor deposition ("PVD").
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