发明名称 PFC DECOMPOSITION METHOD, PFC DECOMPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a PFC decomposition method which enables more efficient decomposition of a PFC gas by enhancing the decomposition ratio of the PFC gas, a PFC decomposition apparatus and a method for manufacturing a semiconductor device. <P>SOLUTION: The PFC decomposition apparatus is equipped with a chamber in the PFC decomposition apparatus 14 into which the PFC gas discharged from a processing apparatus 10 such as a semiconductor manufacturing apparatus is introduced, a mechanism for generating plasma in the PFC decomposition chamber and a mechanism 16 for supplying an oxidizing gas into the PFC decomposition chamber. The PFC gas is decomposed by the plasma in the decomposition chamber and chemically reacted with the oxidizing gas to detoxify the PFC gas. The oxidizing gas supplied from the supply mechanism 16 is gas containing KMnO<SB>4</SB>or OsO<SB>4</SB>. The decomposition ratio of the PFC gas is enhanced to efficiently decompose the PFC gas. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003245520(A) 申请公布日期 2003.09.02
申请号 JP20020049190 申请日期 2002.02.26
申请人 SEIKO EPSON CORP 发明人 SUGIURA TOSHIKAZU
分类号 B01D53/70;B01D53/34;C23C16/44;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):B01D53/70;H01L21/306 主分类号 B01D53/70
代理机构 代理人
主权项
地址