| 摘要 |
The invention relates to a semiconductor device having a substrate (1) for instance silicon, with a layer (2, 4) of at least organic material which contains a passage (6, 8) to the substrate (1). The passage (6,8) has walls (7, 9) transverse to the layer (2, 4). A metal layer (11) is applied on the substrate (1) in at least that portion which adjoins the passage (8). The organic material forming the walls (7, 9) of the passage (6, 8) is covered with an oxide liner (12), and the passage (6, 8) is filled with a metal (14). According to the invention, a metal liner (13) of Ti or Ta is provided between the oxide liner (12) and the metal (14) filling the passage (6, 8). It is achieved by this that the device has a better barrier between the organic material (2, 4) and the interconnection metal (14) and that the organic material (2, 4) has a better protection during the various steps of the process.
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