THIN-FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PURPOSE: To improve the yield of production and reliability by using Al-Ta or Al-Ti as the materials for scanning signal lines and gate electrodes and specifying the film thickness of annodically oxidized films. CONSTITUTION: The Al-Ta or Al-Ti is used as the materials of the scanning signal lines GL and gate electrodes of the thin-film transistor substrate provided with the annodically oxidized films AOF of Al on at least either of the scanning signal lines GL and the gate electrodes. The thin films of the annodically oxidized films AOF are formed at >=1000A. A material contg. Cr is used as the material of gate terminals GTM connected to the scanning signal lines GL in such a case. The amts. of the Ta and Ti to be added to the Al-Ta and Al-Ti are preferably specified to 0.5 to 2.5 atomic %. The generation of hillocks is obviated and the generation of residues after etching is obviated as well. In addition, the dielective strength of the annodically oxidized films AOF is high and the yield of production is improved and therefore, the complication of the stage is prevented.