| 摘要 |
In order to produce an integrated component comprising an integrated metal-insulator-metal capacitor (7), a dielectric intermediate layer (11) and an upper electrode (12) are firstly deposited on a copper lower electrode (6) in such a manner that they cover the entire surface. The metal-insulator-metal capacitor (7) is subsequently structured with etch stop in the dielectric intermediate layer (11). The results in preventing short circuits between the upper electrode (12) and the lower electrode (6). |
