Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includesa source region 4, a channel region 8, a drain region 5and a gate electrode which is patterned so that its side wall is tapered to be more narrow toward the top. A drift region 22 is formed between the channel region 8 and drain region 5 so as to be shallow below the gate electrode 7A (first N- layer 22A) and deep in the vicinity of the drain region 5 (second N- layer 22B).This configuration contributes to boosting the withstand voltage and reducing the "on" resistance of the semiconductor device.