| 摘要 |
Upon formation, by oblique ion injection, of a pocket ion region in a p channel type MISFET forming region (n type well) constituting an SRAM, the p channel type MISFET forming region is disposed at a distance from a resist film formed over an n channel type MISFET forming region (p type well), which distance is the product of the thickness H of the resist film and the tangent of an ion injection angle theta. Consequently, an impurity is not injected from one direction in other areas, in spite of the injection from four directions, which makes it possible to suppress fluctuations of the impurity concentration in the pocket ion region.
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