发明名称 Pattern inspection method and apparatus using electron beam
摘要 In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult.For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.
申请公布号 US6614022(B2) 申请公布日期 2003.09.02
申请号 US20010908713 申请日期 2001.07.20
申请人 HITACHI, LTD. 发明人 HIROI TAKASHI;KUNI ASAHIRO;WATANABE MASAHIRO;SHISHIDO CHIE;SHINADA HIROYUKI;GUNJI YASUHIRO;TAKAFUJI ATSUKO
分类号 G01N23/04;G01N23/20;G01N23/225;G01Q30/04;G02F1/13;G06T1/00;G21K7/00;H01J37/22;H01J37/244;H01J37/28;(IPC1-7):H01J37/244;H01J37/26 主分类号 G01N23/04
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