发明名称 |
Structures to mechanically stabilize isolated top-level metal lines |
摘要 |
The invention provides in one embodiment thereof an integrated circuit. The integrated circuit includes a first interconnection metallization layer formed upon a substrate. The integrated circuit further includes a second interconnection metallization layer formed upon the first interconnection metallization layer. The second interconnection metallization layer has formed therein at least one signal line coupled to the first interconnection metallization layer. The second interconnection metallization layer has formed therein at least one protective structure that surrounds the signal line. |
申请公布号 |
US6614118(B1) |
申请公布日期 |
2003.09.02 |
申请号 |
US19990464058 |
申请日期 |
1999.12.15 |
申请人 |
INTEL CORPORATION |
发明人 |
SELVIN ERIC;SESHAN KRISHNA |
分类号 |
H01L23/00;H01L23/522;H01L23/525;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|