发明名称 Structures to mechanically stabilize isolated top-level metal lines
摘要 The invention provides in one embodiment thereof an integrated circuit. The integrated circuit includes a first interconnection metallization layer formed upon a substrate. The integrated circuit further includes a second interconnection metallization layer formed upon the first interconnection metallization layer. The second interconnection metallization layer has formed therein at least one signal line coupled to the first interconnection metallization layer. The second interconnection metallization layer has formed therein at least one protective structure that surrounds the signal line.
申请公布号 US6614118(B1) 申请公布日期 2003.09.02
申请号 US19990464058 申请日期 1999.12.15
申请人 INTEL CORPORATION 发明人 SELVIN ERIC;SESHAN KRISHNA
分类号 H01L23/00;H01L23/522;H01L23/525;(IPC1-7):H01L23/48 主分类号 H01L23/00
代理机构 代理人
主权项
地址