| 摘要 |
A plurality of semiconductor chips are bonded to an adhesive layer formed on a base plate. Then, first to third insulating films, first and second underlying metal layers, first and second re-wirings, and a solder ball are collectively formed for the plural semiconductor chips. In this case, the first and second underlying metal layers are formed by a sputtering method, and the first and second re-wirings are formed by an electroplating method. Then, a laminate structure consisting of the three insulating films, the adhesive layer, and the base plate is cut in a region positioned between the adjacent semiconductor chips. |
