发明名称 |
Transistor having a gate stack comprised of a metal, and a method of making same |
摘要 |
The present invention is generally directed to a transistor having a gate stack comprised of a metal, and a method of making same. In one illustrative embodiment, the transistor is comprised of a gate stack comprised of a gate insulation layer positioned above a semiconducting substrate, a layer of silicon positioned above the gate insulation layer, a layer of adhesion material positioned above the layer of silicon, a layer of metal positioned above the layer of adhesion material, and a plurality of source/drain regions formed in the substrate adjacent the gate stack.
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申请公布号 |
US6614064(B1) |
申请公布日期 |
2003.09.02 |
申请号 |
US20020060422 |
申请日期 |
2002.01.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER PAUL R.;BRENNAN WILLIAM S. |
分类号 |
H01L21/28;H01L29/49;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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