发明名称 |
Metallization process sequence for a barrier metal layer |
摘要 |
In an in situ damascene metallization process employing a barrier layer between the metal and the dielectric, the generation of voids, especially at the bottom of vias, can be significantly reduced or even completely avoided by maintaining the surface temperature below a critical temperature during deposition of the barrier material.
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申请公布号 |
US6613660(B2) |
申请公布日期 |
2003.09.02 |
申请号 |
US20020131699 |
申请日期 |
2002.04.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KAHLERT VOLKER;KOSCHINSKY FRANK;HUEBLER PETER |
分类号 |
H01L21/768;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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