| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which is excellent in electromigration resistance properties and can reduce via resistance, and its forming method. SOLUTION: A diffusion barrier layer for restraining the diffusion of a wiring metal is formed between a first wiring layer, a second wiring layer and a via plug, and a layer insulation film. Atoms of a wiring metal can move between first wiring and the via plug. The wiring metal in a boundary part between the first wiring layer and the via plug is crystallographycally continuous by the growth of a crystal grain boundary. An inter-layer insulation film is laminated on a semiconductor element substrate. A via hole, a groove for the first wiring layer and a groove for the second wiring layer are formed in the inter- layer insulation film. After the first wiring layer is formed by embedding the wiring metal in the groove for the first wiring layer, a diffusion barrier layer is selectively formed only in the via hole and the side wall of the groove of the second wiring layer. The wiring metal is embedded in the via hole and the groove. COPYRIGHT: (C)2003,JPO
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