| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in dry etching. SOLUTION: In a process for performing plasma dry etching treatment to a conductive film that is deposited on a wafer with a photoresist pattern formed on the conductive film as an etching mask, uniformity in an etching speed of a film to be etched in a surface to be etched is measured by continuously monitoring points from a change-starting point A to a change-ending point B, in an emission waveform of a desired wavelength that is detected from plasma during dry etching treatment. The optimum value of the amount of etching in the film to be etched is grasped based on the measured value. COPYRIGHT: (C)2003,JPO
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