发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS POWER- UP READ METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and its power-up read method. <P>SOLUTION: The nonvolatile semiconductor memory device executes an automatic read operation at a power-up. For the automatic read operation, first, it is detected whether a power supply voltage reaches a first detecting voltage or not at a power-up time. When the power supply voltage reaches the first detecting voltage, it starts to generate a wordline voltage. When the wordline voltage is charged up to a desired voltage level, a read operation of the memory device is executed with a well-known process. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003242795(A) 申请公布日期 2003.08.29
申请号 JP20030018692 申请日期 2003.01.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE SEUNG-KEUN
分类号 G11C17/12;G11C7/00;G11C7/20;G11C8/08;G11C8/10;G11C16/06;G11C16/26;G11C16/30;(IPC1-7):G11C16/06 主分类号 G11C17/12
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