| 摘要 |
PROBLEM TO BE SOLVED: To reliably improve a breakdown voltage in an ultra high-speed field effect transistor. SOLUTION: Under a channel layer 108 where a gate electrode 111 is formed, upper and lower subchannel layers 106 and 104 are formed via a barrier layer 107 between channels where the energy level of a conduction band is higher than the channel layer 108. In the upper subchannel layer 106, the energy level of the conduction band is higher than the channel layer 108, and at the same time is lower than the barrier layer 107 between channels. In the lower subchannel layer 104, the energy level of the conduction band is higher than the upper subchannel layer 106, and at the same time is lower than the barrier layer 107 between channels. COPYRIGHT: (C)2003,JPO
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