SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To realize further improvement in a method of manufacturing semiconductor device in which drop of transistor characteristic can be prevented by preventing formation of a channel-stop implantation layer within an active region.

SOLUTION: After the patterning of a nitride film 22, thickness of an SOI layer 3 is measured (S2) and the etching condition (etching time or the like) of the SOI layer 3 is determined (S3). Thickness of the SOI layer 3 can be measured by irradiating an object surface with the linearly polarized light beam and using polarizing ellipsometry for measuring elliptically polarized light beam reflected by the object surface. A trench TR2 is formed under the determined etching condition using the patterned nitride film 22 as an etching mask (S4).

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