发明名称 PLASMA BAFFLE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus by which characteristics of plasma is improved by controlling dissociation and ionization in the plasma and its method. <P>SOLUTION: A method consists of a process for supplying a flow of a precursory gas into a treatment chamber (104), a process for exhausting an excess gas from the treatment chamber (104), a process for locating a substrate (112) on a substrate holder (106) in the treatment chamber (104), a process for producing the plasma (120) with the precursory gas in the treatment chamber (104), and a process for reducing the plasma (120) in a space surrounding the substrate (112) by using a baffle device (102) and the substrate holder (106). A wall of the baffle device (102) encloses the outside edge of the substrate holder (106) and a part of its surface opposite to the face on which the substrate (112) is located. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003243379(A) 申请公布日期 2003.08.29
申请号 JP20020329550 申请日期 2002.11.13
申请人 TOKYO ELECTRON LTD 发明人 FINK STEVEN
分类号 H05H1/46;B01J19/08;H01J37/32;H01L21/3065 主分类号 H05H1/46
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