| 发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a substrate having no warpage and thereby improve the manufacturing yield. <P>SOLUTION: A MIS type thin film transistor comprises a semiconductor layer formed of polycrystal silicon formed on the substrate. The gate of this thin film transistor is formed in separation from a wiring layer connected thereto. <P>COPYRIGHT: (C)2003,JPO</p> |
| 申请公布号 |
JP2003243661(A) |
申请公布日期 |
2003.08.29 |
| 申请号 |
JP20020036467 |
申请日期 |
2002.02.14 |
| 申请人 |
HITACHI LTD |
发明人 |
TANAKA MASAHIRO;KANEKO TOSHITERU;SAITO YUTAKA |
| 分类号 |
G02F1/1368;H01L21/336;H01L29/423;H01L29/43;H01L29/49;H01L29/786;(IPC1-7):H01L29/786;G02F1/136 |
主分类号 |
G02F1/1368 |
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