| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which a current injection efficiency in an active layer and a light emitting efficiency are high. <P>SOLUTION: The semiconductor light emitting element comprises a GaN buffer layer 102, a non-doped GaN layer 103, an n-type GaN contact layer 104, an n-type AlGaN lower cladding layer 105, a multiple quantum well light emitting layer 106, a p-type AlGaN upper cladding layer 107 and a p-type GaN current diffusion layer 108 sequentially laminated on a sapphire substrate 101. The element further comprises an insular current blocking layer 109 made of an LiGaO<SB>2</SB>epitaxially grown between the cladding layer 107 and the layer 108. <P>COPYRIGHT: (C)2003,JPO |
