| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device operable with high performance and at a high withstanding voltage. SOLUTION: A source of an NMOS transistor 1 is connected to ground, its drain is connected to a source of a high withstanding voltage NMOS transistor 4 via an inductor 5, and a drain of the high withstanding voltage NMOS transistor 4 is connected to a power supply line Vdd via an inductor 3. When an output Vout is extracted from the drain of the high withstanding voltage NMOS transistor 4 and an input voltage Vin is given to the gate of the NMOS transistor 1 and a bias voltage Vg2 is given to the gate of the high withstanding voltage NMOS transistor 4, the NMOS transistor 1 and the high withstanding voltage NMOS transistor 4 are operated, the amplitude of the voltage of the high withstanding voltage NMOS transistor 4 to which the inductor 3 is connected, swings around the power supply voltage as a center, and as the output voltage increases, the amplitude of the voltage is increased. COPYRIGHT: (C)2003,JPO
|
