| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the film thickness of silicon grease on the composition plane of a base plate and a radiating fin can be made uniform when coupling the base plate and the radiating fin by bolts and reliability can be improved by suppressing stress applied to an insulating substrate in the semiconductor device in which the base plate and the radiating fin are coupled by interposing heat conductive grease between the both. SOLUTION: On the rear side of the base plate or on the counter side of the radiating fin, a plurality of recesses are formed while being located inside positions of a plurality of first mounting holes on the base plate or a plurality of second mounting holes on the radiating fin proximately to the plurality of first mounting holes or the plurality of second mounting holes and when coupling the base plate and the radiating fin, the heat conductive grease near the inside of the positions of the plurality of first mounting holes and the plurality of second mounting holes is made to escape to the plurality of recesses. COPYRIGHT: (C)2003,JPO |
