| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam lithography device with high resolution of which, electron beam is surely prevented from being subjected to an unexpected shielding effect caused by an aperture of an electron gun. SOLUTION: A first prescribed negative voltage lead from a voltage source 60 is impressed to a disk substrate 15 of a specimen, and a second prescribed negative voltage with larger absolute value than that of the first prescribed negative voltage is impressed to a turn table 16 mounting the specimen. A resolution is enhanced by reducing the speed of the high speed electron beam so as to make the specimen effectively absorb the electron beam. A plurality of apertures 44a, 44b of which, the positions are adjustable, are installed to an electron beam passage located on the inside of an electron gun 41 extending from an electron gun 41 to the specimen. Ammeters 71, 72 detect the current generated by the contact of the electron beam with the apertures 44a, 44b. By the above, whether the apertures 44a, 44b are located at preferable positions or not is decided. COPYRIGHT: (C)2003,JPO
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