| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an inexpensive insulation type semiconductor device, in which a thermal stress or a thermal strain generated upon manufacturing or operating is reduced and the fear of deformation, denaturation or destruction of respective members is eliminated. <P>SOLUTION: The insulation type semiconductor device is constituted of a ceramics sheet having the thickness of 0.25-1.25 mm, a wiring metallic layer, provided on one of the main surface of the ceramics sheet and having the thickness of 0.1-2.3 mm, and a rear surface metallic layer, provided on the other main surface of the ceramics sheet and having the thickness of 0.025-2.0 mm. The wiring metallic layer and the rear surface metallic layer are constituted of a circuit substrate consisting of an aluminum alloy having the same quality and the same physical property, a semiconductor element substrate, fixed to the wiring metallic layer, and a supporting member fixed to the rear surface metallic layer. <P>COPYRIGHT: (C)2003,JPO</p> |
