| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device, electrooptic device, electronic equipment, method for manufacturing thin-film semiconductor devices, and a method for manufacturing electrooptic devices, capable of reducing the occurrence of erroneous operations by improving the on-current balance between an N-channel type TFT and a P-channel type TFT used in a complementary circuit. <P>SOLUTION: In a TFT array substrate 10, a picture element switching TFT 30 assumes both a bottom gate structure and a top gate structure. A low- concentration source region 1b and a low-concentration drain region 1c are positioned facing the end of a scanning line 3a through a second gate insulating film 2b in between them and, moreover, facing the edges of a first gate electrode 8a, this with a first gate insulating film 2a in between them. <P>COPYRIGHT: (C)2003,JPO</p> |
