发明名称 PLASMA TREATMENT APPARATUS, AND PROTECTION FILM THEREFOR, AND MOUNTING METHOD OF THE PROTECTION FILM
摘要 <P>PROBLEM TO BE SOLVED: To inhibit generation of foreign objects from a plasma treatment chamber that is operated as an earth electrode or components in the plasma treatment chamber. <P>SOLUTION: In a plasma treatment apparatus for generating plasma in a treatment chamber and for treating a sample, a surface that is made of a metal conductor that is grounded and is in contact with plasma in a plasma treatment chamber 1 is covered with plasma-resistant macromolecular materials (protection films) 14 and 105 where relationship between a relative dielectric constant k&epsi; and a thickness t (&mu;m) is expressed by t/k&epsi;<300. Additionally, a protection film 105 that is formed by a resin material that has plasma resistance and water absorption properties is expanded and shrunk for adhering and fixing to an outer surface of components in the treatment chamber 1. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003243373(A) 申请公布日期 2003.08.29
申请号 JP20020042513 申请日期 2002.02.20
申请人 HITACHI HIGH TECH CORP 发明人 KOROYASU KUNIHIKO;FURUSE MUNEO;TAMURA SATOYUKI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
主权项
地址