| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of preventing the diffusion of N-H base groups into a photoresist where they can render the photoresist insoluble. <P>SOLUTION: A split barrier layer enables copper interconnection wires to be used in conjunction with a low-k dielectric film by preventing the diffusion of N-H base groups into the photoresist where they can render the photoresist insoluble. The split barrier layer 9 is disposed between copper 5 and a low-k dielectric 17 and includes a nitrogen-containing, oxygen-free film which contacts the copper, and an oxygen-containing, nitrogen-free film which contacts the low-k dielectric film. The nitrogen-containing film prevents the formation of undesirable copper oxides, and the oxygen-containing film prevents the diffusion of N-H base groups into the low-k dielectric film. The oxygen-containing film may be an oxygen-doped silicon carbide film in an exemplary embodiment. N-H base groups are prevented from diffusing from the low-k dielectric film and neutralizing acid catalysts in the photoresist used to define a dual damascene opening. <P>COPYRIGHT: (C)2003,JPO</p> |
