| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic resistance when an electrode is formed in each contact hole which is formed on each of semiconductor layers of mesa junctions by using a dry etching method. SOLUTION: A contact hole for emitter 113, where an extraction electrode for emitter 115 electrically connected to an emitter layer 105A on a base layer 104A is provided, is formed so as to offset in the direction that the hole 113 goes off from a contact hole 112 for base, where a base electrode 114 electrically connected to the base layer 104A is provided, with respect to the center of the emitter layer 105A. COPYRIGHT: (C)2003,JPO
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