SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve an emission intensity in a semiconductor light emitting element of the structure in which electrodes for applying a bias to an n-type region and a p-type region of a light emitting semiconductor layer are formed at the same surface side of a supporting substrate.

SOLUTION: A first conductivity type first contact layer 2 is stacked on the support substrate 1. A light emitting semiconductor layer 3 having a light emitting junction 33 formed in a boundary between a first conductivity type clad 31 and a second conductivity type clad 32 arranged at lower and upper sites is formed on the layer 2. A second conductivity type second contact layer 4 is laminated on the layer 3. An exposure region 21 on the surface is formed to be surrounded by the layer 3 is formed on the layer 2, and a first electrode 5 is formed at an equal distance to the layer 3 on the region 21. A second electrode 6 is formed to surround the region 2 at a predetermined distance from the boundary A between the region 21 and the layer 3 on the layer 4.

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