| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of breakdown by preventing large charge from flowing through a parasitic PN junction diode of an output transistor when negative static charge is applied to an output terminal, without employing a method in which an off transistor is put in the output terminal as an ESD protective element. SOLUTION: Related to an semiconductor element whose output terminal is connected to an N-type MOS transistor, a Schottky barrier diode is connected in parallel with the N-type MOS transistor connected to the output terminal. Thereby, even when the negative static charge is applied to the output terminal, the large charge is released through the Schottky barrier diode, so that ESD breakdown does not occur. COPYRIGHT: (C)2003,JPO
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