| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which screening for an internal circuit can be performed without inputting directly reference voltage from the outside and without increasing the number of external terminals. SOLUTION: This device is provided with an internal voltage generating circuit controlling internal voltage supplied to an internal circuit in accordance with reference voltage, a reference voltage generating circuit generating reference voltage, a plurality of signal terminals for delivering and receiving a signal between the terminals and the outside, and a reference voltage change indicating circuit for indicating change of reference voltage to the reference voltage generating circuit based on a binary input signal for each signal terminal at a test. COPYRIGHT: (C)2003,JPO
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