| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III nitride-based semiconductor light emitting element which has a strong electrostatic resistance and easy handling. <P>SOLUTION: The III nitride-based semiconductor light emitting element comprises an element body having a first n-conductive semiconductor layer, a second p-conductive semiconductor layer, a light emitting layer formed between the first layer and the second layer, a first electrode electrically connected to the first layer, a second electrode electrically connected to the second layer; and a diode section provided in parallel in a reverse direction to the body between the first electrode and the second electrode and separate from the body via a groove. <P>COPYRIGHT: (C)2003,JPO |
