| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can prevent degradation of reliability and electrical characteristics due to residual element in a growth furnace. <P>SOLUTION: A dummy layer 7 consisting of an AlGaInP and GaInP or AlInP is formed to have a prescribed thickness by epitaxial growth on a multilayer structure 1-6 including a light emitting layer 5, and then the dummy layer is removed. Consequently, since unnecessary element remaining in a growth furnace during the epitaxial growth of the dummy layer 7 is taken in the dummy layer 7, it becomes possible to prevent degradation of reliability and electrical characteristics due to the residual element in the growth furnace. <P>COPYRIGHT: (C)2003,JPO |
