发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To achieve wiring with an excellent transmission characteristic, good productivity and high density. SOLUTION: There is formed, concentrically with a high frequency connecting terminal 50, a shielding connecting terminal 51 formed of a solder bump in an outside of the high frequency connecting terminal 50 formed of a solder bump between a high frequency electrode 14 of a chip 10 and a high frequency internal terminal 46 of a wiring substrate 20. Further, there is formed, concentrically with a high frequency through hole conductive portion 48 connected to an internal terminal 46 of the wiring substrate 20, a shielded through hole conductive portion 36 in the outside of the high frequency through hole conductive portion 48 with an insulation film 38 sandwiched. Influences of the electromagnetic field of the high frequency connecting terminal and the high frequency through hole conductive portion can be prevented by the shielded connecting terminal and the shielded through hole conductive portion, so that the transmission characteristic can be improved and high density wiring can be achieved. A large number of the shielded connecting terminals and the shielded through hole conductive portions can be formed simultaneously by means of batch processing such as a CCB method, a lithographic method and an etching method or the like, respectively, so that productivity can be prevented from lowering. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003243439(A) 申请公布日期 2003.08.29
申请号 JP20020044725 申请日期 2002.02.21
申请人 HITACHI LTD 发明人 SAKAZUME TATSUMI;MIYAMOTO SEIJI
分类号 H01L23/12;H01L21/60;H01L21/822;H01L27/04;(IPC1-7):H01L21/60 主分类号 H01L23/12
代理机构 代理人
主权项
地址