| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can be miniaturized and is provided with electrodes formed at low temperatures. SOLUTION: After oxide films 4 and polycrystalline silicon layers 5 are formed on surface of a silicon substrate 3, electrodes 1 and 2 respectively having layers 6 composed of a compound or mixture of a metal and germanium or the metal and a germanium - silicon compound are formed by forming layers in which the reaction starting temperature between the metal and the germanium or the metal and the germanium - silicon compound is controlled to 450-500°C on the upper surface of the silicon layers 5 and heating the layers. The metal is selected from among W, Ti, Zr, Ta, Mo, Nb, Hf, VCu, Co, Cr, Ni, Mn, Pt, Rh, Ir, Pd, etc., and the percentage composition of the metal and the germanium or the germanium - silicon compound is adjusted to 1:1 to 1:3 in molar ratio. COPYRIGHT: (C)2003,JPO
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