| 摘要 |
PROBLEM TO BE SOLVED: To efficiently eliminate the chlorine (Cl) component by rinsing a LiTaO substrate, around electrodes after etching of which the Cl component is attached, with pure water whose insulation resistance is decreased to 0.2 MΩor below resulting from addition of alcohol through high-speed revolution and to prevent electrostatic breakdown caused between rinse liquid and the substrate through the revolution of the substrate. SOLUTION: When eliminating a reaction product material 4 containing halogen group gas on a wafer made of a piezoelectric substrate 2 by using a rinse liquid, after etching process wherein a pattern is formed on electrodes 1 on the wafer, using a dry etching apparatus, pure water is used, whose specific resistance is controlled to be 20 MΩ.m through the addition of alcohol. COPYRIGHT: (C)2003,JPO
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