| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element that can be driven by a large current under a high voltage by excellently adhering electrode pads, wiring, and electrodes to each other and is composed of SiC, and to provide a method of manufacturing the element. SOLUTION: The semiconductor element is equipped with an SiC substrate 1, an SiC layer 2 provided on the substrate 1, and a Schottky electrode 7 and an upper-surface electrode pad 4 successively provided on the layer 2 in this order. The element is also equipped with an ohmic electrode 3 provided on the rear surface of the substrate 1 and composed of Ni, and a rear-surface electrode pad 14 provided on the electrode 3 and composed of a Ti layer 5 and an Au layer 6. Since the upper surface of the ohmic electrode 3 is treated for removing Ni carbides, the adhesion between the electrode 3 and the Ti layer 5 is strong. Consequently, occurrence of a resistance increase in the electrode 3 due to the imperfect contact between the electrode and the layer 5 can be suppressed. COPYRIGHT: (C)2003,JPO
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