| 摘要 |
PROBLEM TO BE SOLVED: To provide an SDH type semiconductor laser device wherein leakage current is reduced and an electrostatic capacity is small. SOLUTION: This semiconductor laser device 40 is an AlGaAs-based SDH type semiconductor laser device, and it has [100] plane as a substrate surface 42a. Furthermore, it is provided with a laser resonator structure formed on a ridge 44 as a striped lamination structure 46 with a triangular cross section, a buried lamination structure 48 wherein the ridge and the lamination structure 46 on the ridge are buried, and two split grooves 50 formed respectively in the buried lamination structure on both sides of the ridge in the same direction as the ridge, on an n-type GaAs substrate 42 that is provided with the striped ridge 44 having an upper surface 44a parallel to the substrate surface 42a. An Al oxidation layer 62 with buried lamination structure is formed by epitaxially growing an AlGaAs layer on an n-type GaAs buffer layer 52a together with an AlGaAs layer 54, oxidizing selectively an Al in the AlGaAs layer and converting it to an Al oxidation layer. In this case, the AlGaAs layer is the highest in Al content among compound semiconductor layers forming the buried lamination structure 48. COPYRIGHT: (C)2003,JPO
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