| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a heterojunction bipolar transistor which is capable of reducing base extraction resistance and achieving higher speed while simplifying a manufacturing process. SOLUTION: The method comprises steps of forming a first conductive collector layer 3 in a sub-collector layer 2 on the surface of a silicon substrate 1; covering the collector layer 3 to sequentially deposit four layers of a base layer 5, a cap silicon layer 6, a base extraction layer 7 and an insulating layer 8; forming openings in the insulating layer 8 and the base extraction layer 7 for exposing the cap silicon layer 6; forming sidewalls 11 in the opening; and forming an emitter electrode 13 made of polycrystal silicon, which fills the inside of the opening, and diffusing first conductive impuries in the cap silicon layer 6 to create an emitter 14. COPYRIGHT: (C)2003,JPO
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