SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce crystal defects in a polycrystalline silicon film. SOLUTION: On a quartz substrate 1 having an insulative surface, an amorphous silicon film of 500Åthickness is formed, and the amorphous silicon film is heated at 600°C for 12 hours as a first heat treatment to form a polycrystalline silicon film 2 of a first crystalline silicon film. Then the polycrystalline silicon film 2 is heated in an atmosphere of mixture gas including hydrogen and silane at 900°C for 5 minutes as a second heat treatment to form a polycrystalline silicon film 2a, which is a second crystalline silicon film and is almost similar to a single crystal silicon film in the crystalline state. COPYRIGHT: (C)2003,JPO