| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a good contact between a capacitor and a conductive plug in a method of manufacturing a semiconductor device having the capacitor. <P>SOLUTION: After forming a stopper film 13 formed of metal or a conductive metal oxide over an insulation film 8, holes 8b are formed in the stopper film 13 and the insulation film 8. A conductive film for a plug is formed in the holes 8b and over the stopper film 13. By removing the conductive film for a plug by polishing it from above the stopper film 13, while leaving it in the holes 8b, conductive plugs 14b are formed in the holes 8b. A conductive film 15 for lower electrodes, a dielectric film 16, and a conductive film 17 for upper electrodes are formed in this order over the conductive plugs 14b and the stopper film 13. Thereafter, the stopper film 13 over the insulation film 8, the conductive film 15 for lower electrodes, the dielectric film 16, and the conductive film 17 for upper electrodes are patterned to form a capacitor Q<SB>1</SB>. <P>COPYRIGHT: (C)2003,JPO |
