发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a wafer treatment apparatus for positively controlling temperature distribution of a semiconductor wafer that is being etched in a clear state. <P>SOLUTION: Independent slits 11 and 12 for circulating coolants are provided at an inner and outer peripheries in an electrode block 1. At the same time, a slit 13 is formed between them, and heat conduction is inhibited between the inner and outer peripheries. Since the unification of temperature in the electrode block 1 is inhibited by the slit 13, inside of the surface of the electrode block 1 can be set to an arbitrary, independent temperature, and the positive and clear control of a temperature distribution pattern can be obtained. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003243371(A) 申请公布日期 2003.08.29
申请号 JP20020038915 申请日期 2002.02.15
申请人 HITACHI LTD;HITACHI HIGH TECH CORP 发明人 ARAI MASATSUGU;UDO RYUJIRO;TAMURA NAOYUKI;SUMIYA MASANORI;KIKKAI MOTOHIKO
分类号 H05H1/46;C23C16/458;H01L21/205;H01L21/3065;H01L21/68;H01L21/683 主分类号 H05H1/46
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