发明名称 Method of producing pattern-formed structure and photomask used in the same
摘要 The present invention discloses a method of producing a pattern-formed structure, comprising the processes of: preparing a substrate for a pattern-formed structure having a characteristic-modifiable layer whose characteristic at a surface thereof can be modified by the action of photocatalyst; preparing a photocatalyst-containing-layer side substrate having a photocatalyst-containing layer formed on a base material, the photocatalyst-containing layer containing photocatalyst; arranging the substrate for a pattern-formed structure and the photocatalyst-containing-layer side substrate such that the characteristic-modifiable layer faces the photocatalyst-containing layer with a clearance of no larger than 200 mum therebetween; and irradiating energy to the characteristic-modifiable layer from a predetermined direction, and modifying characteristic of a surface of the characteristic-modifiable layer, thereby forming a pattern at the characteristic-modifiable layer. According to this method, a highly precise pattern can be formed without necessity to carry out any post-treatment after exposure. Further, there is no concern that the pattern-formed structure itself deteriorates because the produced pattern-formed structure is free of the photocatalyst.
申请公布号 US2003162132(A1) 申请公布日期 2003.08.28
申请号 US20030388288 申请日期 2003.03.13
申请人 KOBAYASHI HIRONORI 发明人 KOBAYASHI HIRONORI
分类号 B41C1/10;G03F1/00;G03F1/14;G03F7/00;G03F7/11;G03F7/20;(IPC1-7):G03F9/00;G03F7/26 主分类号 B41C1/10
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