| 摘要 |
There is described an organic thin-film transistor fabricated on a substrate. The organic thin-film transistor includes a first insulating layer formed on the substrate; an organic semiconductor layer formed on the first insulating layer; a second insulating layer formed on the organic semiconductor layer; a first through-hole bored through the second insulating layer; a second through-hole bored through the second insulating layer; a source electrode embedded in the first through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the source electrode contacts the organic semiconductor layer; a drain electrode embedded in the second through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the drain electrode contacts the organic semiconductor layer; and a gate electrode embedded in the first insulating layer.
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