发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
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申请公布号 |
US2003160269(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20030372079 |
申请日期 |
2003.02.25 |
申请人 |
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发明人 |
INOUE KAORU;IKEDA YOSHITO;HIROSE YUTAKA;NISHII KATSUNORI |
分类号 |
H01L21/338;H01L29/20;H01L29/778;H01L29/812;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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