| 摘要 |
An electrostatic chuck for holding a wafer includes a ceramic plate of which one main surface is formed to work as a mounting surface for mounting the wafer, and electrostatic attraction electrodes formed on a lower surface of the ceramic plate or in the ceramic plate. A recess portion having a depth in a range of from 3 to 10 mum is formed on one main surface of the ceramic plate excluding an outer peripheral portion thereof. The waviness of a top face of the outer peripheral portion is set to 1 to 3 mum, a gas groove is provided to a peripheral portion of a bottom surface of the recess-portion bottom surface, and electrostatic attraction electrodes are disposed in the ceramic plate disposed below the bottom surface of the convex portion. In the electrostatic chuck thus constructed, even a wafer having a deformation such as a warped portion can be firmly attracted, a uniform temperature distribution over a wafer surface can be implemented, leakage of a heat-conductive gas can be suppressed, and moreover, high wafer-dechucking sensitivity can be exhibited.
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