| 摘要 |
<p>The inventive heterostructures are used for producing semiconductor injection radiation sources such as injection lasers, semiconductor amplifying elements and semiconductor optical amplifiers which are used for fibre optic communication and data transmission systems, high-speed optic computer and commutation systems, medical equipment, laser technological equipment, lasers with double-frequency generated radiation and also for pumping solid state and fibre amplifiers and lasers. The inventive heterostructure, injection laser, semiconductor amplifying element and semiconductor optical amplifier are different on account of the modernised heterostructure, the complex selection of compositions, the thicknesses and layering thereof which ensure the performance of said injection lasers, semiconductor amplifying elements and semiconductor optical amplifiers in a narrow transition region where the controlled outflow of radiation from an active layer is formed.</p> |
