| 摘要 |
<p>A sputtering target for a phase change memory characterized in that the target is composed of three or more elements, the main component is one or more selected from antimony, tellurium, and selenium, and the variation of the composition from the composition to be achieved is within ± 1.0 at% and a film for a phase change memory formed by using the target are disclosed. Impurities that are segregated and condensed at and near the interface between a memory point and a non-memory portion and causes reduction of number of rewrite operations, particularly impurity elements influencing the crystallization rate are decreased as few as possible. The composition variation of the target from the composition to be achieved and component segregation are reduced. Thus, a sputtering target for a phase change memory that enables improvement of the rewrite characteristics of the phase change memory and the crystallization rate and its production method are provided.</p> |
