发明名称 |
Plasma processing method and apparatus |
摘要 |
In a plasma processing method which comprises supplying a processing gas to a vacuum vessel 2 forming a plasma production part, producing a plasma 6 using an antenna 1 and a Faraday shield 8 which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield 8 and a sample 12 which is disposed in the vacuum vessel 2 and which is a nonvolatile material as a material to be etched is etched.
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申请公布号 |
US2003160024(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20020083252 |
申请日期 |
2002.02.27 |
申请人 |
KAWAGUCHI TADAYASHI;KANEKIYO TADAMITSU;MITSUDA AKIHIKO;SHIMADA TAKESHI;KANAI SABUROU |
发明人 |
KAWAGUCHI TADAYASHI;KANEKIYO TADAMITSU;MITSUDA AKIHIKO;SHIMADA TAKESHI;KANAI SABUROU |
分类号 |
H01J37/32;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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